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	Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature
	Lv, Meizhe; Xu, Bin; Cai, Lichao; Guo, Xiaofei; Yuan, Xingdong
刊名	APPLIED SURFACE SCIENCE
	2018
卷号	439页码:780-783
关键词	Cubic boron nitride Hexagonal boron nitride Growth interface Auger electron spectroscopy Transition mechanism
DOI	10.1016/j.apsusc.2018.01.111
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4567242
专题	山东大学
作者单位	1.Shandong Univ, Sch Mat Sci & Engn, Jinan 250101, Shandong, Peoples R China. 2.Shand
推荐引用方式 GB/T 7714	Lv, Meizhe,Xu, Bin,Cai, Lichao,et al. Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature[J]. APPLIED SURFACE SCIENCE,2018,439:780-783.
APA	Lv, Meizhe,Xu, Bin,Cai, Lichao,Guo, Xiaofei,&Yuan, Xingdong.(2018).Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature.APPLIED SURFACE SCIENCE,439,780-783.
MLA	Lv, Meizhe,et al."Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature".APPLIED SURFACE SCIENCE 439(2018):780-783.

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