QQ客服 官方微博 反馈留言

	Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method
	Yu, Kai; Yang, Fan; Cong, Hui; Zhou, Lin; Liu, Qingyun; Zhang, Lichun; Cheng, Buwen; Xue, Chunlai; Zuo, Yuhua; Li, Chuanbo
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2018
卷号	750页码:182-188
关键词	GeOI High crystal quality Back-gate pMOSFET Field-effect hole mobility
DOI	10.1016/j.jallcom.2018.02.178
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4564456
专题	山东大学
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Integra
推荐引用方式 GB/T 7714	Yu, Kai,Yang, Fan,Cong, Hui,et al. Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,750:182-188.
APA	Yu, Kai.,Yang, Fan.,Cong, Hui.,Zhou, Lin.,Liu, Qingyun.,...&Li, Chuanbo.(2018).Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method.JOURNAL OF ALLOYS AND COMPOUNDS,750,182-188.
MLA	Yu, Kai,et al."Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method".JOURNAL OF ALLOYS AND COMPOUNDS 750(2018):182-188.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。