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	Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique
	Xie, Xuejian; Sun, Li; Chen, Xiufang; Yang, Xianglong; Hu, Xiaobo; Xu, Xiangang
刊名	SCRIPTA MATERIALIA
	2019
卷号	167页码:76-80
关键词	Silicon carbide Compound semiconductors Electrical resistivity X-ray diffraction Crystal growth
DOI	10.1016/j.scriptamat.2019.03.039
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4548502
专题	山东大学
作者单位	Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Pe
推荐引用方式 GB/T 7714	Xie, Xuejian,Sun, Li,Chen, Xiufang,et al. Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique[J]. SCRIPTA MATERIALIA,2019,167:76-80.
APA	Xie, Xuejian,Sun, Li,Chen, Xiufang,Yang, Xianglong,Hu, Xiaobo,&Xu, Xiangang.(2019).Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique.SCRIPTA MATERIALIA,167,76-80.
MLA	Xie, Xuejian,et al."Sublimation growth and property characterization of p-type 4H-SiC by Al-B co-doping technique".SCRIPTA MATERIALIA 167(2019):76-80.

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