| Ti-Ti σ bond at oxygen vacancy inducing the deep defect level in anatase TiO2 (101) surface | |
| Hao Y.-N.; Chen T.; Zhang X.; Zhou H.; Ma Y. | |
| 刊名 | Journal of Chemical Physics
 |
| 2019 | |
| 卷号 | 150期号:22 |
| DOI | 10.1063/1.5108595 |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4548355 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Chemistry and Chemical Engineering, Shandong University, Jinan, 250100, China 2.School of Chemistry and Chemical Engine |
| 推荐引用方式 GB/T 7714 | Hao Y.-N.,Chen T.,Zhang X.,et al. Ti-Ti σ bond at oxygen vacancy inducing the deep defect level in anatase TiO2 (101) surface[J]. Journal of Chemical Physics,2019,150(22). |
| APA | Hao Y.-N.,Chen T.,Zhang X.,Zhou H.,&Ma Y..(2019).Ti-Ti σ bond at oxygen vacancy inducing the deep defect level in anatase TiO2 (101) surface.Journal of Chemical Physics,150(22). |
| MLA | Hao Y.-N.,et al."Ti-Ti σ bond at oxygen vacancy inducing the deep defect level in anatase TiO2 (101) surface".Journal of Chemical Physics 150.22(2019). |
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