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	Quantum anomalous Hall effect and gate-controllable topological phase transition in layered EuCd2As2
	Niu, Chengwang; Mao, Ning; Hu, Xiangting; Huang, Baibiao; Dai, Ying
刊名	PHYSICAL REVIEW B
	2019
卷号	99期号:23
DOI	10.1103/PhysRevB.99.235119
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4534679
专题	山东大学
作者单位	Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peop
推荐引用方式 GB/T 7714	Niu, Chengwang,Mao, Ning,Hu, Xiangting,et al. Quantum anomalous Hall effect and gate-controllable topological phase transition in layered EuCd2As2[J]. PHYSICAL REVIEW B,2019,99(23).
APA	Niu, Chengwang,Mao, Ning,Hu, Xiangting,Huang, Baibiao,&Dai, Ying.(2019).Quantum anomalous Hall effect and gate-controllable topological phase transition in layered EuCd2As2.PHYSICAL REVIEW B,99(23).
MLA	Niu, Chengwang,et al."Quantum anomalous Hall effect and gate-controllable topological phase transition in layered EuCd2As2".PHYSICAL REVIEW B 99.23(2019).

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