Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics | |
Chen, Sheng-Chi; Huang, Sin-Yi; Sakalley, Shikha; Paliwal, Abhyuday; Chen, Yin-Hung; Liao, Ming-Han; Sun, Hui; Biring, Sajal | |
刊名 | Journal of Alloys and Compounds |
2019 | |
页码 | 428-434 |
DOI | 10.1016/j.jallcom.2019.02.268 |
URL标识 | 查看原文 |
公开日期 | [db:dc_date_available] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4532048 |
专题 | 山东大学 |
作者单位 | Department of Materials Engineering and Center for Plasma and T |
推荐引用方式 GB/T 7714 | Chen, Sheng-Chi,Huang, Sin-Yi,Sakalley, Shikha,et al. Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics[J]. Journal of Alloys and Compounds,2019:428-434. |
APA | Chen, Sheng-Chi.,Huang, Sin-Yi.,Sakalley, Shikha.,Paliwal, Abhyuday.,Chen, Yin-Hung.,...&Biring, Sajal.(2019).Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics.Journal of Alloys and Compounds,428-434. |
MLA | Chen, Sheng-Chi,et al."Optoelectronic properties of Cu3N thin films deposited by reactive magnetron sputtering and its diode rectification characteristics".Journal of Alloys and Compounds (2019):428-434. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论