| A review of β-Ga_2O_3 single crystal defects; their effects on device performance and their formation mechanism | |
| Bo Fu; Zhitai Jia; Wenxiang Mu; Yanru Yin; Jian Zhang; Xutang Tao | |
| 刊名 | Journal of Semiconductors
 |
| 2019 | |
| 期号 | 01页码:51-61 |
| 关键词 | β-Ga_2O_3 crystal defects device performance formation mechanism |
| URL标识 | 查看原文 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4530292 |
| 专题 | 山东大学 |
| 作者单位 | State Key Laboratory of Crystal Materials & Key Laboratory of Functional Crystal Materia |
| 推荐引用方式 GB/T 7714 | Bo Fu,Zhitai Jia,Wenxiang Mu,et al. A review of β-Ga_2O_3 single crystal defects; their effects on device performance and their formation mechanism[J]. Journal of Semiconductors,2019(01):51-61. |
| APA | Bo Fu,Zhitai Jia,Wenxiang Mu,Yanru Yin,Jian Zhang,&Xutang Tao.(2019).A review of β-Ga_2O_3 single crystal defects; their effects on device performance and their formation mechanism.Journal of Semiconductors(01),51-61. |
| MLA | Bo Fu,et al."A review of β-Ga_2O_3 single crystal defects; their effects on device performance and their formation mechanism".Journal of Semiconductors .01(2019):51-61. |
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