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	Microstructures and emission characteristics of porous silicon films
	Luo, Wen; Hu, Wenbo; Zheng, Yu; Song, Zhongxiao; Wu, Huiyan
刊名	Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology
	2012
卷号	32期号:[db:dc_citation_issue]页码:30-35
关键词	Cold cathodes Doping levels Emission characteristics Emission current Etching condition Etching time Field emission scanning electron microscopy High density Low pressures N type silicon Porous si Porous silicon films Si wafer
ISSN号	1672-7126
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4455592
专题	西安交通大学
推荐引用方式 GB/T 7714	Luo, Wen,Hu, Wenbo,Zheng, Yu,et al. Microstructures and emission characteristics of porous silicon films[J]. Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology,2012,32([db:dc_citation_issue]):30-35.
APA	Luo, Wen,Hu, Wenbo,Zheng, Yu,Song, Zhongxiao,&Wu, Huiyan.(2012).Microstructures and emission characteristics of porous silicon films.Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology,32([db:dc_citation_issue]),30-35.
MLA	Luo, Wen,et al."Microstructures and emission characteristics of porous silicon films".Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology 32.[db:dc_citation_issue](2012):30-35.

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