Dielectrophoretic assembly and atomic force microscopy modification of reduced graphene oxide

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	Dielectrophoretic assembly and atomic force microscopy modification of reduced graphene oxide
	Zhang Y(张嵛); Liu LQ(刘连庆); Xi N(席宁); Wang YC(王越超); Dong ZL(董再励); Wejinya, Uchechukwu C.
刊名	JOURNAL OF APPLIED PHYSICS
	2011
卷号	110 期号:11
关键词	SINGLE-LAYER GRAPHENE ELECTRIC-FIELD GRAPHITE RESOLUTION REDUCTION PARTICLES DEFECTS FILMS CELLS
ISSN号	0021-8979
产权排序	1
中文摘要	A simple and controllable method is developed to experimentally study the effects of defects on reduced graphene oxide (RGO) sheets for nanoelectronics application. First, a deterministic technique is developed to assemble a single layer graphene oxide sheet onto the gaps of microelectrodes by optimizing the dielectrophoretic parameters (10 V(pp) at 1MHz for 5s). This is followed by the utilization of atomic force microscopy-based mechanical cutting method to form line defects on RGO sheets. Based on these two procedures, the experimental studies of the effects of line defects on RGO are investigated, which provides an alternative approach to study the influence of defects on graphene. The electric transport measurement results show that the electrical performance of the defected RGO devices generally decrease due to Anderson localization, which supports the theoretical studies of the influence of defects on the electrical properties of RGO. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665212]
WOS标题词	Science & Technology ; Physical Sciences
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
关键词[WOS]	SINGLE-LAYER GRAPHENE ; ELECTRIC-FIELD ; GRAPHITE ; RESOLUTION ; REDUCTION ; PARTICLES ; DEFECTS ; FILMS ; CELLS
收录类别	SCI ; EI
资助信息	The authors acknowledge the support of the National High Technology Research and Development Program of China (Grant No. 2009AA03Z316), National Natural Science Foundation of China (Project Nos. 60904095, 51050110445, and 61175103), and the CAS FEA International Partnership Program for Creative Research Teams. Additionally the authors would like to thank Jinping Zhao and Zhongshuai Wu for helpful discussions and support.
语种	英语
WOS记录号	WOS:000298254800154
公开日期	2012-05-29
内容类型	期刊论文
源URL	[http://ir.sia.cn/handle/173321/7344]
专题	沈阳自动化研究所_机器人学研究室
推荐引用方式 GB/T 7714	Zhang Y,Liu LQ,Xi N,et al. Dielectrophoretic assembly and atomic force microscopy modification of reduced graphene oxide[J]. JOURNAL OF APPLIED PHYSICS,2011,110(11).
APA	Zhang Y,Liu LQ,Xi N,Wang YC,Dong ZL,&Wejinya, Uchechukwu C..(2011).Dielectrophoretic assembly and atomic force microscopy modification of reduced graphene oxide.JOURNAL OF APPLIED PHYSICS,110(11).
MLA	Zhang Y,et al."Dielectrophoretic assembly and atomic force microscopy modification of reduced graphene oxide".JOURNAL OF APPLIED PHYSICS 110.11(2011).