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	Removal of boron impurity in polysilicon by electrochemically etching of polysilicon film to form porous silicon, performing stabilization treatment, introducing into electron beam melting furnace, and setting vacuum chamber degree.
	GUO S LI J QIN S TAN Y SHI S YOU X
	2015
公开日期	2015-03-18
URL标识	查看原文
申请日期	2013-08-28
内容类型	专利
URI标识	http://www.corc.org.cn/handle/1471x/4412915
专题	大连理工大学
作者单位	UNIV DALIAN TECHNOLOGY (UYDA-C
推荐引用方式 GB/T 7714	GUO S LI J QIN S TAN Y SHI S YOU X. Removal of boron impurity in polysilicon by electrochemically etching of polysilicon film to form porous silicon, performing stabilization treatment, introducing into electron beam melting furnace, and setting vacuum chamber degree.. 2015-01-01.

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