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	Study of the perpendicular self-assembly of a novel high-chi block copolymer without any neutral layer on a silicon substrate
	Zhang, Baolin; Liu, Weichen; Meng, Lingkuan; Zhang, Zhengping; Zhang, Libin; Wu, Xing; Dai, Junyan; Mao, Guoping; Wei, Yayi
	2019
卷号	9期号:7页码:3828-3837
URL标识	查看原文
WOS记录号	WOS:000457727800036
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4392081
专题	成都理工大学
作者单位	1.[1]Guizhou Univ, Coll Big Data & Informat Engn, Guiyang 550025, Guizhou, Peoples R China 2.[2]Chinese Acad Sci, Inst Microelect, Integrated Circuit Adv Proc Ctr ICAC, IME, Beijing 100029, Peoples R China 3.[3]Integrated Circuit Mat & Components Ind Technol I, 27 Zhichun Rd, Beijing 100083, Peoples R China 4.[4]Chengdu Technol Univ, Sch Elect Engn, Chengdu 611730, Sichuan, Peoples R China 5.[5]Jiangsu HanTop Photomat Co Ltd, Floor 4-5,Bldg 9,1158 Zhongxin Rd, Shanghai, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Baolin,Liu, Weichen,Meng, Lingkuan,et al. Study of the perpendicular self-assembly of a novel high-chi block copolymer without any neutral layer on a silicon substrate[J],2019,9(7):3828-3837.
APA	Zhang, Baolin.,Liu, Weichen.,Meng, Lingkuan.,Zhang, Zhengping.,Zhang, Libin.,...&Wei, Yayi.(2019).Study of the perpendicular self-assembly of a novel high-chi block copolymer without any neutral layer on a silicon substrate.,9(7),3828-3837.
MLA	Zhang, Baolin,et al."Study of the perpendicular self-assembly of a novel high-chi block copolymer without any neutral layer on a silicon substrate".9.7(2019):3828-3837.

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