| Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer | |
| Tao, Pengcheng; Liang, Hongwei; Xia, Xiaochuan; Chen, Yuanpeng; Yang, Chao; Liu, Jianxun; Zhu, Zhifu; Liu, Yang; Shen, Rensheng; Luo, Yingmin | |
| 刊名 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
 |
| 2016 | |
| 卷号 | 41页码:291-296 |
| 关键词 | SiC AlGaN SiNx interlayer Metal organic chemical vapor deposition |
| ISSN号 | 1369-8001 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4365013 |
| 专题 | 大连理工大学 |
| 作者单位 | 1.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 2.Jilin Univ, Sch Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China. 3.Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China. 4.Jilin Univ, Sch Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Tao, Pengcheng,Liang, Hongwei,Xia, Xiaochuan,et al. Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,41:291-296. |
| APA | Tao, Pengcheng.,Liang, Hongwei.,Xia, Xiaochuan.,Chen, Yuanpeng.,Yang, Chao.,...&Du, Guotong.(2016).Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,41,291-296. |
| MLA | Tao, Pengcheng,et al."Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 41(2016):291-296. |
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