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	Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes
	Wan, Hui; Tang, Bin; Li, Ning; Zhou, Shengjun; Gui, Chengqun; Liu, Sheng
刊名	NANOMATERIALS
	2019
卷号	9期号:3
关键词	GaN-based UV LED wet chemical etching prism-structured sidewall crystal orientation light extraction
ISSN号	2079-4991
DOI	10.3390/nano9030365
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4263766
专题	武汉大学
推荐引用方式 GB/T 7714	Wan, Hui,Tang, Bin,Li, Ning,et al. Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes[J]. NANOMATERIALS,2019,9(3).
APA	Wan, Hui,Tang, Bin,Li, Ning,Zhou, Shengjun,Gui, Chengqun,&Liu, Sheng.(2019).Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes.NANOMATERIALS,9(3).
MLA	Wan, Hui,et al."Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes".NANOMATERIALS 9.3(2019).

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