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	High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes
	Li, Haixia; Zhao, Wanqiu; Liu, Yang; Liang, Yi; Ma, Liang; Zhu, Meng; Yi, Chujun; Xiong, Lun; Gao, Yihua
刊名	Materials Letters
	2019
卷号	239
ISSN号	0167-577X
DOI	10.1016/j.matlet.2018.12.041
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4232421
专题	武汉大学
推荐引用方式 GB/T 7714	Li, Haixia,Zhao, Wanqiu,Liu, Yang,et al. High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes[J]. Materials Letters,2019,239.
APA	Li, Haixia.,Zhao, Wanqiu.,Liu, Yang.,Liang, Yi.,Ma, Liang.,...&Gao, Yihua.(2019).High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes.Materials Letters,239.
MLA	Li, Haixia,et al."High-level-Fe-doped P-type ZnO nanowire array/n-GaN film for ultraviolet-free white light-emitting diodes".Materials Letters 239(2019).

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