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	Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory
	Wu, Facai; Si, Shuyao; Cao, Peng; Wei, Wei; Zhao, Xiaolong; Shi, Tuo; Zhang, Xumeng; Ma, Jianwei; Cao, Rongrong; Liao, Lei
刊名	Advanced Electronic Materials
	2019
卷号	5期号:4
DOI	10.1002/aelm.201800747
URL标识	查看原文
收录类别	EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4231931
专题	武汉大学
推荐引用方式 GB/T 7714	Wu, Facai,Si, Shuyao,Cao, Peng,et al. Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory[J]. Advanced Electronic Materials,2019,5(4).
APA	Wu, Facai.,Si, Shuyao.,Cao, Peng.,Wei, Wei.,Zhao, Xiaolong.,...&Liu, Qi.(2019).Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory.Advanced Electronic Materials,5(4).
MLA	Wu, Facai,et al."Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive-Bridging Random Access Memory".Advanced Electronic Materials 5.4(2019).

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