Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices

	Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices
	Qiao XF ; Chen JS ; Li XL ; Ma DG
刊名	journal of applied physics
	2010
卷号	107 期号:10 页码:文献编号：104505
关键词	CHARGE-TRANSPORT METAL-OXIDES MOLYBDENUM TRIOXIDE INJECTING LAYER THIN-FILMS DIODES INTERFACE TRAPS
ISSN号	0021-8979
通讯作者	qiao xf
中文摘要	conduction mechanism in molybdenum trioxide (moox)-doped hole- and electron-type organic semiconductors is investigated. the used hole-transporting materials are n, n'-diphenyl-n, n'-bis (1-naphthylphenyl)-1, 1'-biphen4, 4'-diamine, 4',4"-tri(n-carbazolyl)triphenylamine, 4, 4'-n, n-dicarbazole-biphenyl, and pentacene and the used electron-transporting material is (8-quinolinolato) aluminum (alq(3)). it can be seen that the hole conductivity is significantly enhanced upon moox doping, and more importantly, dominant hole current could be realized in a typical electron-transport material alq(3) by doping moox. hence, high efficiency organic light-emitting devices can also be achieved even using moox-doped alq3 film as hole transporting layer. the mechanism investigation indicates that the moox plays an important role in the hole transport. it is showed that the moox serves as the hole hopping sites, whereas the used organic materials serve as the transport medium and determine the magnitude of transport current. furthermore, it is found that doping moox into the organic materials also reduces the energy and position disorders of the doped organic films, which are well demonstrated by the study on transport characteristics of the doped films at various temperatures. (c) 2010 american institute of physics. [doi:10.1063/1.3428374]
收录类别	SCI收录期刊论文
语种	英语
WOS记录号	WOS:000278182400171
公开日期	2012-06-06
内容类型	期刊论文
源URL	[http://ir.ciac.jl.cn/handle/322003/43687]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Qiao XF,Chen JS,Li XL,et al. Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices[J]. journal of applied physics,2010,107(10):文献编号：104505.
APA	Qiao XF,Chen JS,Li XL,&Ma DG.(2010).Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices.journal of applied physics,107(10),文献编号：104505.
MLA	Qiao XF,et al."Observation of hole hopping via dopant in MoOx-doped organic semiconductors: Mechanism analysis and application for high performance organic light-emitting devices".journal of applied physics 107.10(2010):文献编号：104505.