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Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2film grown on Cu foil substrate for flexible nonvolatile memory device
Wang, Hongjun; Zhu, Yuanyuan; Fu, Dejun
刊名Journal of Alloys and Compounds
2017
卷号695
ISSN号0925-8388
DOI10.1016/j.jallcom.2016.11.180
URL标识查看原文
收录类别EI
语种英语
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/4214691
专题武汉大学
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Wang, Hongjun,Zhu, Yuanyuan,Fu, Dejun. Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2film grown on Cu foil substrate for flexible nonvolatile memory device[J]. Journal of Alloys and Compounds,2017,695.
APA Wang, Hongjun,Zhu, Yuanyuan,&Fu, Dejun.(2017).Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2film grown on Cu foil substrate for flexible nonvolatile memory device.Journal of Alloys and Compounds,695.
MLA Wang, Hongjun,et al."Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2film grown on Cu foil substrate for flexible nonvolatile memory device".Journal of Alloys and Compounds 695(2017).
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