EXPERIMENTAL-DETERMINATION OF THE INTRINSIC STACKING-FAULT ENERGY OF SIC CRYSTALS

CORC > 金属研究所 > 中国科学院金属研究所

	EXPERIMENTAL-DETERMINATION OF THE INTRINSIC STACKING-FAULT ENERGY OF SIC CRYSTALS
	X. G. Ning ; H. Q. Ye
刊名	Journal of Physics-Condensed Matter
	1990
卷号	2 期号:50 页码:10223-10225
关键词	silicon-carbide growth
ISSN号	0953-8984
中文摘要	The intrinsic stacking fault in the (111) plane of SiC, which is closed by two Shockley partial dislocations, has been observed by high-resolution electron microscopy. The energy of the intrinsic stacking-fault of SiC is experimentally determined and compared with the theoretical value calculated by Denteneer et al.
原文出处	://WOS:A1990EQ29100028
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/39590]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	X. G. Ning,H. Q. Ye. EXPERIMENTAL-DETERMINATION OF THE INTRINSIC STACKING-FAULT ENERGY OF SIC CRYSTALS[J]. Journal of Physics-Condensed Matter,1990,2(50):10223-10225.
APA	X. G. Ning,&H. Q. Ye.(1990).EXPERIMENTAL-DETERMINATION OF THE INTRINSIC STACKING-FAULT ENERGY OF SIC CRYSTALS.Journal of Physics-Condensed Matter,2(50),10223-10225.
MLA	X. G. Ning,et al."EXPERIMENTAL-DETERMINATION OF THE INTRINSIC STACKING-FAULT ENERGY OF SIC CRYSTALS".Journal of Physics-Condensed Matter 2.50(1990):10223-10225.