The effect of electron effective mass mismatch on the electron-optical-phonon scattering rate in a quantum well structure

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	The effect of electron effective mass mismatch on the electron-optical-phonon scattering rate in a quantum well structure
	Y. S. Zheng ; T. Q. Lu ; J. Liu ; W. H. Su
刊名	Semiconductor Science and Technology
	1997
卷号	12 期号:10 页码:1235-1239
关键词	semiconductor gaas
ISSN号	0268-1242
中文摘要	The effective mass mismatch of a conduction-band electron in a semiconductor quantum well structure brings about a novel confinement of the electron movement along the well-growth direction in addition to the conduction-band offset. Using the electron-optical-phonon interaction Hamiltonian of the dielectric continuum model, we calculate the scattering rates due to the interaction of the electron with the well, barrier and interface phonons respectively. By comparison with the corresponding results for the case without the electron effective mass mismatch it is shown that the electron effective mass mismatch has a remarkable influence on the scattering rate, especially for relatively high electron energy, and much attention should be paid to it.
原文出处	://WOS:A1997YB05200009
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/38235]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. S. Zheng,T. Q. Lu,J. Liu,et al. The effect of electron effective mass mismatch on the electron-optical-phonon scattering rate in a quantum well structure[J]. Semiconductor Science and Technology,1997,12(10):1235-1239.
APA	Y. S. Zheng,T. Q. Lu,J. Liu,&W. H. Su.(1997).The effect of electron effective mass mismatch on the electron-optical-phonon scattering rate in a quantum well structure.Semiconductor Science and Technology,12(10),1235-1239.
MLA	Y. S. Zheng,et al."The effect of electron effective mass mismatch on the electron-optical-phonon scattering rate in a quantum well structure".Semiconductor Science and Technology 12.10(1997):1235-1239.