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Photoluminescence mechanism for blue-light-emitting porous silicon
G. G. Qin ; X. S. Liu ; S. Y. Ma ; J. Lin ; G. Q. Yao ; X. Y. Lin ; K. X. Lin
刊名Physical Review B
1997
卷号55期号:19页码:12876-12879
关键词visible luminescence optical-properties emission si excitation origin
ISSN号1098-0121
中文摘要A comparative study of photoluminescence (PL) and photoluminescence excitation (PLE) spectra of porous silicon (PS) and Si oxide, both enlitting blue light, is reported. The PLE spectrum of Si oxide monitored at 160 nm displays a three-peak structure with peak wavelengths around 265, 300, and 360 nm. The PLE intensity of the PS sample increases with decreasing excitation wavelength, and has three shoulders located at wavelengths near the three PLE peak wavelengths of Si oxide. When the PS sample is oxidized for half an hour at 1150C [the temperature at which nanometer Si particles (NSP's) inside PS disappear], blue-light PL intensity reduces greatly, and its PLE spectrum changes into a spectrum very similar to that of Si oxide. The experimental result strongly indicates that for the blue-light emission from PS there are two types of photosxcitation processes: photoexcitation occurs in NSP's and in the Si oxide layers covering NSP's, and radiative recombinntion of electron-hole pairs is carried out in luminescence centers located on the interfaces between NSP's and Si oxide and in those inside Si oxide layers.
原文出处://WOS:A1997XC40400017
公开日期2012-04-14
内容类型期刊论文
源URL[http://ir.imr.ac.cn/handle/321006/38066]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
G. G. Qin,X. S. Liu,S. Y. Ma,et al. Photoluminescence mechanism for blue-light-emitting porous silicon[J]. Physical Review B,1997,55(19):12876-12879.
APA G. G. Qin.,X. S. Liu.,S. Y. Ma.,J. Lin.,G. Q. Yao.,...&K. X. Lin.(1997).Photoluminescence mechanism for blue-light-emitting porous silicon.Physical Review B,55(19),12876-12879.
MLA G. G. Qin,et al."Photoluminescence mechanism for blue-light-emitting porous silicon".Physical Review B 55.19(1997):12876-12879.
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