Extended quantum confinement luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle- or nanometer-Ge-particle-embedded silicon oxide films

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	Extended quantum confinement luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle- or nanometer-Ge-particle-embedded silicon oxide films
	G. G. Qin
刊名	Materials Research Bulletin
	1998
卷号	33 期号:12 页码:1857-1866
关键词	oxides luminescence defects blue-light emission visible luminescence optical-properties nanocrystals mechanism dependence sio2-films absorption spectra defects
ISSN号	0025-5408
中文摘要	Through analysis of the latest experimental results reported in the literature and obtained in our laboratory, we have extended our previous quantum confinement/luminescence center model for the photoluminescence mechanism of porous Si and of nanometer-silicon-particle-embedded Si oxide films (G.G. Qin and Y.Q. Jia, Solid State Commun. 86, 559 (1993)). We consider that there are three main types of competitive photoexcitation/photoemission processes and that the process in which photoexcitation occurs in the nanometer silicon particles (NSPs) while photoemission occurs in the luminescence centers (LCs) in the SiOx layers very close to the NSPs is usually the major one. We discuss under what conditions the other two types of processes will dominate. We believe that the extended quantum confinement/luminescence center model is a physical model that is suitable for the photoluminescence from silicon oxide films embedded with NSPs or nanometer Ge particles (NGPs), as well as from oxidized porous Si. (C) 1999 Elsevier Science Ltd.
原文出处	://WOS:000078606600014
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/37751]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	G. G. Qin. Extended quantum confinement luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle- or nanometer-Ge-particle-embedded silicon oxide films[J]. Materials Research Bulletin,1998,33(12):1857-1866.
APA	G. G. Qin.(1998).Extended quantum confinement luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle- or nanometer-Ge-particle-embedded silicon oxide films.Materials Research Bulletin,33(12),1857-1866.
MLA	G. G. Qin."Extended quantum confinement luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle- or nanometer-Ge-particle-embedded silicon oxide films".Materials Research Bulletin 33.12(1998):1857-1866.