Cross-sectional electron microscopy observation on the amorphized indentation region in 001 single-crystal silicon

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	Cross-sectional electron microscopy observation on the amorphized indentation region in 001 single-crystal silicon
	Y. Q. Wu ; X. Y. Yang ; Y. B. Xu
刊名	Acta Materialia
	1999
卷号	47 期号:8 页码:2431-2436
ISSN号	1359-6454
中文摘要	The amorphized region of single-crystal silicon (c-Si) induced by Vickers indentation has been studied cross-sectionally by transmission electron microscopy (TEM) and high-resolution electron microscopy (HREM). A comparison between the V-shaped profile of the amorphous region and the stress isobars under the indenter shows that the deviatoric stress plays a significant role in the formation of amorphous silicon (a-Si). A number of defects near the crystalline/amorphous (cla) interface, and the refinement and rotation of grains at local regions, are observed by HREM. The distortion of lattice fringes in the c-Si region and the domains characterized by distorted lattice in the a-Si region near the interface as well as continuous transition from the crystalline to the amorphous region at the interface are also observed. A possible mechanism of defect-induced or heavy-deformation-induced amorphization of silicon under indentation is suggested. (C) 1999 Acta Metallurgica Inc. Published by Elsevier Science Ltd. All rights reserved.
原文出处	://WOS:000081439600012
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/37538]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Y. Q. Wu,X. Y. Yang,Y. B. Xu. Cross-sectional electron microscopy observation on the amorphized indentation region in 001 single-crystal silicon[J]. Acta Materialia,1999,47(8):2431-2436.
APA	Y. Q. Wu,X. Y. Yang,&Y. B. Xu.(1999).Cross-sectional electron microscopy observation on the amorphized indentation region in 001 single-crystal silicon.Acta Materialia,47(8),2431-2436.
MLA	Y. Q. Wu,et al."Cross-sectional electron microscopy observation on the amorphized indentation region in 001 single-crystal silicon".Acta Materialia 47.8(1999):2431-2436.