Static and cyclic creep behaviour of SiC whisker reinforced aluminium composite

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	Static and cyclic creep behaviour of SiC whisker reinforced aluminium composite
	S. C. Tjong ; Z. Y. Ma ; Z. G. Wang
刊名	Materials Science and Technology
	1999
卷号	15 期号:6 页码:666-672
关键词	high-temperature creep matrix composites al composite stress alloy microstructure rupture
ISSN号	0267-0836
中文摘要	Static and cyclic creep tests were carried out in tension at 573-673 K on a 20 vol.-%SiC whisker reinforced aluminium (Al/SiCw) composite. The Al/SiCw composite exhibited an appaient str ess exponent of 18.1-19.0 at 573-673 K and an apparent activation energy of 325 kJ mol(-1) for static creep, whereas an apparent stress exponent of 19.6 at 623 K and an apparent activation energy of 376 kJ mol(-1) were observed for cyclic creep. A cyclic creep retardation (CCR) behaviour was observed for the Al/SiCw composite. The steady state creep rate for cyclic creep was three orders of magnitude lower than that for. static creep. Furthermore, the steady state creep I rates of the composite tended to clear ease continuously with increasing percentage unloading amount. The static creep data of the Al/SiCw coinposite were rationalised by the substructure invariant model with a true stress exponent of 8 together with a threshold stress. The CCR behaviour can be explained by the storage of anelastic strain delaying non-recoverable creep during the onload cycles.
原文出处	://WOS:000081278600009
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/37511]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	S. C. Tjong,Z. Y. Ma,Z. G. Wang. Static and cyclic creep behaviour of SiC whisker reinforced aluminium composite[J]. Materials Science and Technology,1999,15(6):666-672.
APA	S. C. Tjong,Z. Y. Ma,&Z. G. Wang.(1999).Static and cyclic creep behaviour of SiC whisker reinforced aluminium composite.Materials Science and Technology,15(6),666-672.
MLA	S. C. Tjong,et al."Static and cyclic creep behaviour of SiC whisker reinforced aluminium composite".Materials Science and Technology 15.6(1999):666-672.