Optical and electrical properties of direct-current magnetron sputtered ZnO : Al films | |
Z. L. Pei ; C. Sun ; M. H. Tan ; J. Q. Xiao ; D. H. Guan ; R. F. Huang ; L. S. Wen | |
刊名 | Journal of Applied Physics
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2001 | |
卷号 | 90期号:7页码:3432-3436 |
关键词 | transparent conducting films oxide thin-films mechanism sensors |
ISSN号 | 0021-8979 |
中文摘要 | In this study, high-quality ZnO:Al (ZAO) films were prepared by using dc reaction magnetron sputtering technology. The effect of Al doped in ZnO films on electrical and optical properties and its scattering mechanism were discussed in detail. The results showed that Al2O3 could be effectively removed by controlling oxygen flow and Al-doped concentration during deposition of ZnO:Al films. Zn, Al, and oxygen elements were well distributed through the films. For highly degenerated ZnO:Al semiconductor thin films, it was revealed that ionized impurity scattering dominated the Hall mobility of the films in the low-temperature range; while the lattice vibration became a major scattering mechanism in the high-temperature range. The grain-boundary scattering only played a major role in the ZAO films with small grain size (as compared to the electron mean-free path). The photoelectric properties of ZAO films showed that the lower resistivity (similar to 5x10(-4) Omega cm) was obtained, and transmittance in the visible range and reflectance in the IR region were above 80% and 60%, respectively. (C) 2001 American Institute of Physics. |
原文出处 | |
公开日期 | 2012-04-14 |
内容类型 | 期刊论文 |
源URL | [http://ir.imr.ac.cn/handle/321006/36776] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Z. L. Pei,C. Sun,M. H. Tan,et al. Optical and electrical properties of direct-current magnetron sputtered ZnO : Al films[J]. Journal of Applied Physics,2001,90(7):3432-3436. |
APA | Z. L. Pei.,C. Sun.,M. H. Tan.,J. Q. Xiao.,D. H. Guan.,...&L. S. Wen.(2001).Optical and electrical properties of direct-current magnetron sputtered ZnO : Al films.Journal of Applied Physics,90(7),3432-3436. |
MLA | Z. L. Pei,et al."Optical and electrical properties of direct-current magnetron sputtered ZnO : Al films".Journal of Applied Physics 90.7(2001):3432-3436. |
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