Electron paramagnetic resonance parameters for various V3+ centers in 4H- and 6H-SiC crystals

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	Electron paramagnetic resonance parameters for various V3+ centers in 4H- and 6H-SiC crystals
	W. C. Zheng ; S. Y. Wu ; M. Gong ; J. Zi
刊名	Physical Review B
	2002
卷号	66 期号:24
关键词	superposition model silicon-carbide sic polytypes spectra impurities ions
ISSN号	1098-0121
中文摘要	In this paper, the complete high-order perturbation formulas of electron-paramagnetic-resonance (EPR) parameters (zero-field splittings and g factors) for 3d(2) ion in trigonal tetrahedral clusters have been derived from a cluster approach. In these formulas, not only the contribution due to crystal-field mechanism, but also the contributions due to charge-transfer mechanism (which is neglected in the crystal-field theory) are included. From these formulas, the g shifts Deltag(parallel to)(=g(parallel to)-g(e)), Deltag(perpendicular to)(=g(perpendicular to)-g(e)) and the zero-field splittings D for various V3+ centers in 4H- and 6H-SiC crystals are reasonably explained. It is found that in the studies of EPR parameters for 3d(2) ions (particularly, in the case of ions having high valence state) in strong covalency crystals, both the contribution due to crystal-field mechanism and that due to charge-transfer mechanism should be taken into account.
原文出处	://WOS:000180319200035
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/36580]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	W. C. Zheng,S. Y. Wu,M. Gong,et al. Electron paramagnetic resonance parameters for various V3+ centers in 4H- and 6H-SiC crystals[J]. Physical Review B,2002,66(24).
APA	W. C. Zheng,S. Y. Wu,M. Gong,&J. Zi.(2002).Electron paramagnetic resonance parameters for various V3+ centers in 4H- and 6H-SiC crystals.Physical Review B,66(24).
MLA	W. C. Zheng,et al."Electron paramagnetic resonance parameters for various V3+ centers in 4H- and 6H-SiC crystals".Physical Review B 66.24(2002).