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	Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes
	Liu, Xingtong; Li, Ning; Hu, Jinfeng; Gao, Yinlin; Wang, Ruiqing; Zhou, Shengjun
刊名	ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
	2018
卷号	7期号:6
ISSN号	2162-8769
DOI	10.1149/2.0191806jss
URL标识	查看原文
收录类别	SCIE
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4155213
专题	武汉大学
推荐引用方式 GB/T 7714	Liu, Xingtong,Li, Ning,Hu, Jinfeng,et al. Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2018,7(6).
APA	Liu, Xingtong,Li, Ning,Hu, Jinfeng,Gao, Yinlin,Wang, Ruiqing,&Zhou, Shengjun.(2018).Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,7(6).
MLA	Liu, Xingtong,et al."Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes".ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 7.6(2018).

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