Oxidation behavior of silicide coating on Ti3SiC2-based ceramic

CORC > 金属研究所 > 中国科学院金属研究所

	Oxidation behavior of silicide coating on Ti3SiC2-based ceramic
	G. M. Liu ; M. S. Li ; Y. C. Zhou ; Y. M. Zhang
刊名	Materials Research Innovations
	2002
卷号	6 期号:5-6 页码:226-231
关键词	titanium silicon carbide silicide coating Oxidation Oxide scale air
ISSN号	1432-8917
中文摘要	A silicide coating was prepared on Ti3SiC2-based ceramic by pack cementation to improve the oxidation resistance of Ti3SiC2, which is a technologically important material for high temperature applications. The microstructure, phase composition and oxidation resistance of the coated sample were investigated. The results demonstrated that the silicide coating was mainly composed of TiSi2 and SiC. A single layer of a mixture of SiO2 and TiO2 was formed on the surface of the coated sample during isothermal oxidation at 1100 degreesC and 1200 degreesC for 20h. Compared to Ti3SiC2, the parabolic rate constant of silicide coated Ti3SiC2 decreased by 2similar to3 orders of magnitude. Furthermore, the coated sample showed much better cyclic oxidation resistance than Ti3SiC2 during the cyclic oxidation at 1100 degreesC for 400 times. However, during the preparation of the coating, a number of fine cracks formed in the outer layer of the coating. When these cracks penetrated the whole coating during the cyclic oxidation, the oxidation rate was accelerated, which degraded the oxidation resistance.
原文出处	://WOS:000180493500002
公开日期	2012-04-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/36342]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	G. M. Liu,M. S. Li,Y. C. Zhou,et al. Oxidation behavior of silicide coating on Ti3SiC2-based ceramic[J]. Materials Research Innovations,2002,6(5-6):226-231.
APA	G. M. Liu,M. S. Li,Y. C. Zhou,&Y. M. Zhang.(2002).Oxidation behavior of silicide coating on Ti3SiC2-based ceramic.Materials Research Innovations,6(5-6),226-231.
MLA	G. M. Liu,et al."Oxidation behavior of silicide coating on Ti3SiC2-based ceramic".Materials Research Innovations 6.5-6(2002):226-231.