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Atomic structure and deformation behaviour around the crack tip induced during indentation of GaAs single crystal
Y. B. Xu ; Z. C. Li ; H. Zhang
刊名Philosophical Magazine Letters
2008
卷号88期号:1页码:19-26
关键词electron-microscopy dislocation emission brittle-fracture silicon-crystals carbide ductile hvem view
ISSN号0950-0839
中文摘要In a previous paper, we reported an investigation of the microstructure ahead of the crack tip induced during indentation at room temperature or GaAs single crystal and found that the crack tip is not atomically sharp. Dislocations may be activated around the crack tip under stress and these lead to a transformation from a crystalline lattice to a disordered structure, forming an amorphous hand between crack walls. It is proposed that the crack propagation is a result of decohesion by the amorphous hand, rather than sequential rupture of cohesive bonds. Here we present an HREM investigation of the atomic structure at the crack tip, including fast Fourier transformations (FFTs) and inverse fast Fourier transformations (IFFTs) performed on selected areas near the crack tip. The observations and analysis further confirm that the crack tip is not atomically sharp, and that the deformation is anisotropic along different crystalline planes.
原文出处://WOS:000252797500003
公开日期2012-04-13
内容类型期刊论文
源URL[http://210.72.142.130/handle/321006/33252]  
专题金属研究所_中国科学院金属研究所
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Y. B. Xu,Z. C. Li,H. Zhang. Atomic structure and deformation behaviour around the crack tip induced during indentation of GaAs single crystal[J]. Philosophical Magazine Letters,2008,88(1):19-26.
APA Y. B. Xu,Z. C. Li,&H. Zhang.(2008).Atomic structure and deformation behaviour around the crack tip induced during indentation of GaAs single crystal.Philosophical Magazine Letters,88(1),19-26.
MLA Y. B. Xu,et al."Atomic structure and deformation behaviour around the crack tip induced during indentation of GaAs single crystal".Philosophical Magazine Letters 88.1(2008):19-26.
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