Preparation of epitaxial orthorhombic YMnO(3) thin films and the current-voltage rectifying effect

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	Preparation of epitaxial orthorhombic YMnO(3) thin films and the current-voltage rectifying effect
	S. Z. Li ; Z. B. Yan ; T. Wei ; S. J. Luo ; B. Liu ; K. F. Wang ; J. M. Liu
刊名	Applied Physics a-Materials Science & Processing
	2009
卷号	94 期号:4 页码:975-980
关键词	stabilization polarization memory phase field
ISSN号	0947-8396
中文摘要	Epitaxial orthorhombic YMnO(3)(YMO) thin films on (001) Nb:SrTiO(3)(NSTO) substrates were prepared by pulsed laser deposition. The weak ferromagnetism at low temperature, probably ascribed to the stretched Mn-spin configuration along [010] direction, was identified. The dielectric anomaly at the spin-glass freezing point indicates clearly a spin-phonon (magnetoelectric) coupling which can be modulated by electric field. The as-prepared YMO/NSTO heterostructure exhibits significant current-voltage (I-V) rectifying effect over a broad temperature range.
原文出处	://WOS:000263069700038
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://210.72.142.130/handle/321006/32035]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	S. Z. Li,Z. B. Yan,T. Wei,et al. Preparation of epitaxial orthorhombic YMnO(3) thin films and the current-voltage rectifying effect[J]. Applied Physics a-Materials Science & Processing,2009,94(4):975-980.
APA	S. Z. Li.,Z. B. Yan.,T. Wei.,S. J. Luo.,B. Liu.,...&J. M. Liu.(2009).Preparation of epitaxial orthorhombic YMnO(3) thin films and the current-voltage rectifying effect.Applied Physics a-Materials Science & Processing,94(4),975-980.
MLA	S. Z. Li,et al."Preparation of epitaxial orthorhombic YMnO(3) thin films and the current-voltage rectifying effect".Applied Physics a-Materials Science & Processing 94.4(2009):975-980.