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The Fermi Level Dependent Electronic Properties of the Smallest (2,2) Carbon Nanotube
L. C. Yin ; R. Saito ; M. S. Dresselhaus
刊名Nano Letters
2010
卷号10期号:9页码:3290-3296
关键词(2 2) carbon nanotube electrochemical doping metal-semiconductor transition superconductivity Fermi level brillouin-zone integrations materials science superconductivity angstrom semiconductor conductivity fullerenes energetics insulator diameter
ISSN号1530-6984
中文摘要A metal semiconductor transition in the smallest (2,2) single-wall carbon nanotube (SWNT) is predicted theoretically as a function of gate voltage. By hole-doping (or heavy electron-doping), the energy gap of a neutral (2,2) SWNT vanishes with structural change, and the (2,2) SWNT becomes metallic. The (2,2) tube assumes a doubly degenerate ground state around the charge neutral condition with an energy barrier, while this tube has only one nondegenerate metallic ground state over an energy window of -0.12 to +0.40 eV. Because of a high density of states at the Fermi energy for hole-doped (2,2) SWNTs, a possible superconducting transition is expected.
原文出处://WOS:000281498200012
公开日期2012-04-13
内容类型期刊论文
源URL[http://210.72.142.130/handle/321006/31654]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
L. C. Yin,R. Saito,M. S. Dresselhaus. The Fermi Level Dependent Electronic Properties of the Smallest (2,2) Carbon Nanotube[J]. Nano Letters,2010,10(9):3290-3296.
APA L. C. Yin,R. Saito,&M. S. Dresselhaus.(2010).The Fermi Level Dependent Electronic Properties of the Smallest (2,2) Carbon Nanotube.Nano Letters,10(9),3290-3296.
MLA L. C. Yin,et al."The Fermi Level Dependent Electronic Properties of the Smallest (2,2) Carbon Nanotube".Nano Letters 10.9(2010):3290-3296.
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