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	Relaxation of compressive strain by inclining threading dislocations in Al0.45Ga0.55N epilayer grown on AlN/sapphire templates using graded-AlxGa1-xN/AlN multi-buffer layers
	Liu, C.
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2009
卷号	42期号:3
ISSN号	0022-3727
DOI	10.1088/0022-3727/42/3/035311
URL标识	查看原文
收录类别	SCIE ; EI
语种	英语
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4095923
专题	武汉大学
推荐引用方式 GB/T 7714	Liu, C.. Relaxation of compressive strain by inclining threading dislocations in Al0.45Ga0.55N epilayer grown on AlN/sapphire templates using graded-AlxGa1-xN/AlN multi-buffer layers[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009,42(3).
APA	Liu, C..(2009).Relaxation of compressive strain by inclining threading dislocations in Al0.45Ga0.55N epilayer grown on AlN/sapphire templates using graded-AlxGa1-xN/AlN multi-buffer layers.JOURNAL OF PHYSICS D-APPLIED PHYSICS,42(3).
MLA	Liu, C.."Relaxation of compressive strain by inclining threading dislocations in Al0.45Ga0.55N epilayer grown on AlN/sapphire templates using graded-AlxGa1-xN/AlN multi-buffer layers".JOURNAL OF PHYSICS D-APPLIED PHYSICS 42.3(2009).

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