Microscopic model for the ferroelectric field effect in oxide heterostructures

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	Microscopic model for the ferroelectric field effect in oxide heterostructures
	S. Dong ; X. T. Zhang ; R. Yu ; J. M. Liu ; E. Dagotto
刊名	Physical Review B
	2011
卷号	84 期号:15
关键词	effect transistor effect devices thin-films electronics interfaces manganites states phase
ISSN号	1098-0121
中文摘要	A microscopic model Hamiltonian for the ferroelectric field effect is introduced for the study of oxide heterostructures with ferroelectric components. The long-range Coulomb interaction is incorporated as an electrostatic potential, solved self-consistently together with the charge distribution. A generic double-exchange system is used as the conducting channel, epitaxially attached to the ferroelectric gate. The observed ferroelectric screening effect, namely, the charge accumulation/depletion near the interface, is shown to drive interfacial phase transitions that give rise to robust magnetoelectric responses and bipolar resistive switching, in qualitative agreement with previous density functional theory calculations. The model can be easily adapted to other materials by modifying the Hamiltonian of the conducting channel, and it is useful in simulating ferroelectric field effect devices particularly those involving strongly correlated electronic components where ab initio techniques are difficult to apply.
原文出处	://WOS:000295872800008
公开日期	2012-04-13
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/30305]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	S. Dong,X. T. Zhang,R. Yu,et al. Microscopic model for the ferroelectric field effect in oxide heterostructures[J]. Physical Review B,2011,84(15).
APA	S. Dong,X. T. Zhang,R. Yu,J. M. Liu,&E. Dagotto.(2011).Microscopic model for the ferroelectric field effect in oxide heterostructures.Physical Review B,84(15).
MLA	S. Dong,et al."Microscopic model for the ferroelectric field effect in oxide heterostructures".Physical Review B 84.15(2011).