Properties of AlN film grown on Si (111) | |
Dai, Yiquan; Li, Shuiming; Sun, Qian; Peng, Qing; Gui, Chengqun; Zhou, Yu; Liu, Sheng | |
刊名 | JOURNAL OF CRYSTAL GROWTH |
2016 | |
卷号 | 435 |
关键词 | Characterization X-ray microdiffraction Metalorganic chemical vapor deposition Nitride Semiconductor III-V materials Piezoelectric materials |
ISSN号 | 0022-0248 |
DOI | 10.1016/j.jcrysgro.2015.11.016 |
URL标识 | 查看原文 |
收录类别 | SCIE |
语种 | 英语 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/4047192 |
专题 | 武汉大学 |
推荐引用方式 GB/T 7714 | Dai, Yiquan,Li, Shuiming,Sun, Qian,et al. Properties of AlN film grown on Si (111)[J]. JOURNAL OF CRYSTAL GROWTH,2016,435. |
APA | Dai, Yiquan.,Li, Shuiming.,Sun, Qian.,Peng, Qing.,Gui, Chengqun.,...&Liu, Sheng.(2016).Properties of AlN film grown on Si (111).JOURNAL OF CRYSTAL GROWTH,435. |
MLA | Dai, Yiquan,et al."Properties of AlN film grown on Si (111)".JOURNAL OF CRYSTAL GROWTH 435(2016). |
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