Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition

	Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition
	Zhu MP(朱美萍) ; Yi K(易葵) ; Fan ZX(范正修) ; Shao JD(邵建达)
刊名	chinese optics letters
	2011
期号	9
WOS记录号	WOS:000287557500023
公开日期	2012-05-07
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/10692]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	Zhu MP,Yi K,Fan ZX,et al. Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition[J]. chinese optics letters,2011(9).
APA	Zhu MP,Yi K,Fan ZX,&Shao JD.(2011).Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition.chinese optics letters(9).
MLA	Zhu MP,et al."Influence of APS bias voltage on properties of HfO2 and SiO2 single layer deposited by plasma ion-assisted deposition".chinese optics letters .9(2011).