Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET

	Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET
	Liu,ZL ; Hu,ZY ; Zhang,ZX ; Shao,H ; Ning,BX ; Chen,M ; Bi,DW ; Zou,SC
刊名	IEEE TRANSACTIONS ON NUCLEAR SCIENCE
	2011
卷号	58 期号:3 页码:1324-1331
关键词	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN号	0018-9499
学科主题	Engineering ; Electrical & Electronic; Nuclear Science & Technology
公开日期	2012-04-10
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/106730]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Liu,ZL,Hu,ZY,Zhang,ZX,et al. Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2011,58(3):1324-1331.
APA	Liu,ZL.,Hu,ZY.,Zhang,ZX.,Shao,H.,Ning,BX.,...&Zou,SC.(2011).Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,58(3),1324-1331.
MLA	Liu,ZL,et al."Total Ionizing Dose Enhanced DIBL Effect for Deep Submicron NMOSFET".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 58.3(2011):1324-1331.