Alternating-current induced thermal fatigue of gold interconnects with nanometer-scale thickness and width

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	Alternating-current induced thermal fatigue of gold interconnects with nanometer-scale thickness and width
	Sun LJ; Ling X; Li XD
刊名	Review of Scientific Instruments
	2011
通讯作者邮箱	lixide@mail.tsinghua.edu.cn
卷号	82 期号:10 页码:103903
关键词	Cu Interconnects Damage Electromigration Metallization Frequency Mechanism Failure Lines Films
ISSN号	0034-6748
通讯作者	Li, XD (reprint author), Tsinghua Univ, CNMM, AML, Dept Engn Mech, Beijing 100084, Peoples R China
产权排序	[Sun, Lijuan; Ling, Xue; Li, Xide] Tsinghua Univ, CNMM, AML, Dept Engn Mech, Beijing 100084, Peoples R China; [Sun, Lijuan] Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China
合作状况	国际
中文摘要	With dramatic reduction in sizes of microelectronic devices, the characteristic width and thickness of interconnects in large-scale integrated circuits have reached nanometer scale. Thermal fatigue damage of so small interconnects has attracted more and more attentions. In this work, thermal fatigue of Au interconnects, 35 nm thick and 0.1-5 mu m wide, is investigated by applying various alternating current densities to generate cycling temperature and strain in them. A multi-probe measuring system is installed in a scanning electron microscope and a probe-type temperature sensor is for the first time introduced into the system for real-time measuring the temperatures on the pads of the tested interconnects. A one-dimensional heat conduction equation, which uses measured temperatures on the pads as boundary conditions and includes a term of heat dissipation through the interface between the interconnect and the oxidized silicon substrate, is proposed to calculate the time-resolved temperature distribution along the Au interconnects. The measured fatigue lifetimes are presented versus current density and thermal cyclic strain, and the results show that narrower Au lines are more reliable. The failure mechanism of those Au interconnects differs from what is observed in thick interconnects with relatively larger grain size. Topography change caused by localized plasticity on the less-constrained surfaces of the interconnects have not been observed. Instead, grain growing and reorienting due to local temperature varying appear, and grain boundary migration and mergence take place during high temperature fatigue in such thin and narrow interconnects. These results seem to reflect a strain-induced boundary migration mechanism, and the damage morphology also suggests that fatigue of the interconnects with decreased grain size and film thickness is controlled by diffusive mechanisms and interface properties rather than by dislocation glide. Open circuit eventually took place by melting at a region of severely damage cross-sectional area with the grain growing and reorienting. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3650459]
学科主题	Instruments & Instrumentation; Physics
分类号	二类/Q2
类目[WOS]	Instruments & Instrumentation ; Physics, Applied
研究领域[WOS]	Instruments & Instrumentation ; Physics
关键词[WOS]	CU INTERCONNECTS ; DAMAGE ; ELECTROMIGRATION ; METALLIZATION ; FREQUENCY ; MECHANISM ; FAILURE ; LINES ; FILMS
收录类别	SCI ; EI
资助信息	This work is supported by the NSFC (Grants No. 10972113 and 10732080), the National Basic Research Program of China (Grant No. 2007CB936803 and 2010CB631005), and SRFDP (Grant No. 20070003053).
原文出处	http://dx.doi.org/10.1063/1.3650459
语种	英语
WOS记录号	WOS:000296531100036
公开日期	2012-04-01
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/44903]
专题	力学研究所_非线性力学国家重点实验室
推荐引用方式 GB/T 7714	Sun LJ,Ling X,Li XD. Alternating-current induced thermal fatigue of gold interconnects with nanometer-scale thickness and width[J]. Review of Scientific Instruments,2011,82(10):103903.
APA	Sun LJ,Ling X,&Li XD.(2011).Alternating-current induced thermal fatigue of gold interconnects with nanometer-scale thickness and width.Review of Scientific Instruments,82(10),103903.
MLA	Sun LJ,et al."Alternating-current induced thermal fatigue of gold interconnects with nanometer-scale thickness and width".Review of Scientific Instruments 82.10(2011):103903.