Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems

	Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems
	Chen QS(陈启生); Jiang YN(姜燕妮); Li W(李炜); Yan JY(颜君毅); Jiang YN(姜燕妮)
	2011
会议名称	2nd International Solvothermal and Hydrothermal-Association Conference (ISHA 2010)
会议日期	JUL 27-29, 2010
通讯作者邮箱	qschen@imech.ac.cn
会议地点	Beijing, PEOPLES R CHINA
关键词	GaN Ammonothermal growth Baffle opening Fluid flow Thermal fields
卷号	37
期号	2-5
页码	467-477
通讯作者	Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
中文摘要	Gallium nitride (GaN) is a wide-bandgap semiconductor material with a wide array of applications in optoelectronics and electronics. Modeling of the fluid flow and thermal fields is discussed, and simulations of velocity and volumetric-flow-rate profiles in different pressure systems are shown. The nutrient is considered as a porous media bed, and the flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite-volume method. We analyzed the heat and mass transfer behaviors in autoclaves with diameters of 2.22, 4.44, and 10 cm. The effects of baffle design on flow pattern, and heat and mass transfer in different autoclaves are analyzed. For the research-grade autoclave with diameter of 2.22 cm, the constraint for the GaN growth is found to be the growth kinetics and the total area of seed surfaces in the case of baffle opening of 10%. For large-size pressure systems, the concentration profiles change dramatically due to stronger convection at higher Grashof numbers. The volumetric flow rates of the solvent across the baffles are calculated. Since ammonothermal growth experiments are expensive and time consuming, modeling becomes an effective tool for research and optimization of ammonothermal growth processes.
收录类别	CPCI（ISTP）
合作状况	国际
产权排序	Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China; Univ N Texas, Denton, TX 76203 USA
会议网址	http://dx.doi.org/10.1007/s11164-011-0276-0
会议录	RESEARCH ON CHEMICAL INTERMEDIATES
会议录出版者	SPRINGER
会议录出版地	VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS
学科主题	Chemistry, Multidisciplinary
语种	英语
ISSN号	0922-6168
内容类型	会议论文
源URL	[http://dspace.imech.ac.cn/handle/311007/45322]
专题	力学研究所_国家微重力实验室
推荐引用方式 GB/T 7714	Chen QS,Jiang YN,Li W,et al. Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems[C]. 见:2nd International Solvothermal and Hydrothermal-Association Conference (ISHA 2010). Beijing, PEOPLES R CHINA. JUL 27-29, 2010.http://dx.doi.org/10.1007/s11164-011-0276-0.