| Effect of aluminum trace dimension on electro-migration failure in flip-chip package | |
| Liu, Peisheng; Fan, Guangming; Liu, Yahong; Yang, Longlong; Miao, Xiaoyong | |
| 刊名 | INTERNATIONAL JOURNAL OF MODERN PHYSICS B
 |
| 2017 | |
| 卷号 | 31期号:7 |
| 关键词 | Flip-chip reliability Joule heating current density electro-migration packaging |
| ISSN号 | 0217-9792 |
| DOI | 10.1142/S0217979217410028 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/3892840 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | Liu, Peisheng,Fan, Guangming,Liu, Yahong,et al. Effect of aluminum trace dimension on electro-migration failure in flip-chip package[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2017,31(7). |
| APA | Liu, Peisheng,Fan, Guangming,Liu, Yahong,Yang, Longlong,&Miao, Xiaoyong.(2017).Effect of aluminum trace dimension on electro-migration failure in flip-chip package.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,31(7). |
| MLA | Liu, Peisheng,et al."Effect of aluminum trace dimension on electro-migration failure in flip-chip package".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 31.7(2017). |
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