| Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance | |
| Guo, Zhinan; Chen, Si; Wang, Zhongzheng; Yang, Zhenyu; Liu, Fei; Xu, Yanhua; Wang, Jiahong; Yi, Ya; Zhang, Han; Liao, Lei | |
| 刊名 | ADVANCED MATERIALS
 |
| 2017 | |
| 卷号 | 29期号:42 |
| 关键词 | 2D materials black phosphorus Raman transistors |
| ISSN号 | 0935-9648 |
| DOI | 10.1002/adma.201703811 |
| URL标识 | 查看原文 |
| 收录类别 | SCIE ; EI ; ESI高被引论文 |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/3891063 |
| 专题 | 武汉大学 |
| 推荐引用方式 GB/T 7714 | Guo, Zhinan,Chen, Si,Wang, Zhongzheng,et al. Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance[J]. ADVANCED MATERIALS,2017,29(42). |
| APA | Guo, Zhinan.,Chen, Si.,Wang, Zhongzheng.,Yang, Zhenyu.,Liu, Fei.,...&Yu, Xue-Feng.(2017).Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance.ADVANCED MATERIALS,29(42). |
| MLA | Guo, Zhinan,et al."Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance".ADVANCED MATERIALS 29.42(2017). |
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