AlN thin films prepared by reactive ion beam coating

	AlN thin films prepared by reactive ion beam coating
	Cheng,LL ; Yu,YH ; Sundaravel,B ; Luo,EZ ; Lin,S ; Lei,YM ; Ren,CX ; Cheung,WY ; Wong,SP ; Xu,JB ; Wilson,IH
刊名	FUNDAMENTAL MECHANISMS OF LOW-ENERGY-BEAM-MODIFIED SURFACE GROWTH AND PROCESSING
	2000
卷号	585 期号:0 页码:251-256
关键词	AUGER-ELECTRON SPECTROSCOPY ALUMINUM NITRIDE DEPOSITION GROWTH
ISSN号	0272-9172
通讯作者	Cheng, LL, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai, Peoples R China
学科主题	Materials Science ; Multidisciplinary
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95831]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Cheng,LL,Yu,YH,Sundaravel,B,et al. AlN thin films prepared by reactive ion beam coating[J]. FUNDAMENTAL MECHANISMS OF LOW-ENERGY-BEAM-MODIFIED SURFACE GROWTH AND PROCESSING,2000,585(0):251-256.
APA	Cheng,LL.,Yu,YH.,Sundaravel,B.,Luo,EZ.,Lin,S.,...&Wilson,IH.(2000).AlN thin films prepared by reactive ion beam coating.FUNDAMENTAL MECHANISMS OF LOW-ENERGY-BEAM-MODIFIED SURFACE GROWTH AND PROCESSING,585(0),251-256.
MLA	Cheng,LL,et al."AlN thin films prepared by reactive ion beam coating".FUNDAMENTAL MECHANISMS OF LOW-ENERGY-BEAM-MODIFIED SURFACE GROWTH AND PROCESSING 585.0(2000):251-256.