Geometrical deviation and residual strain in novel silicon-on-aluminium-nitride bonded wafers
Men, CL ; Xu, Z ; Wu, YJ ; An, ZH ; Xie, XY ; Lin, CL
刊名CHINESE PHYSICS LETTERS
2002
卷号19期号:11页码:1718-1720
关键词INSULATOR TECHNOLOGY FILMS ALN
ISSN号0256-307X
通讯作者Men, CL, Tongji Univ, Inst Microelect Mat, Sch Mat Sci & Engn, Shanghai 200092, Peoples R China
学科主题Physics, Multidisciplinary
收录类别SCI
语种英语
公开日期2012-03-24
内容类型期刊论文
源URL[http://ir.sim.ac.cn/handle/331004/95625]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Men, CL,Xu, Z,Wu, YJ,et al. Geometrical deviation and residual strain in novel silicon-on-aluminium-nitride bonded wafers[J]. CHINESE PHYSICS LETTERS,2002,19(11):1718-1720.
APA Men, CL,Xu, Z,Wu, YJ,An, ZH,Xie, XY,&Lin, CL.(2002).Geometrical deviation and residual strain in novel silicon-on-aluminium-nitride bonded wafers.CHINESE PHYSICS LETTERS,19(11),1718-1720.
MLA Men, CL,et al."Geometrical deviation and residual strain in novel silicon-on-aluminium-nitride bonded wafers".CHINESE PHYSICS LETTERS 19.11(2002):1718-1720.
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