Geometrical deviation and residual strain in novel silicon-on-aluminium-nitride bonded wafers | |
Men, CL ; Xu, Z ; Wu, YJ ; An, ZH ; Xie, XY ; Lin, CL | |
刊名 | CHINESE PHYSICS LETTERS |
2002 | |
卷号 | 19期号:11页码:1718-1720 |
关键词 | INSULATOR TECHNOLOGY FILMS ALN |
ISSN号 | 0256-307X |
通讯作者 | Men, CL, Tongji Univ, Inst Microelect Mat, Sch Mat Sci & Engn, Shanghai 200092, Peoples R China |
学科主题 | Physics, Multidisciplinary |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/95625] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Men, CL,Xu, Z,Wu, YJ,et al. Geometrical deviation and residual strain in novel silicon-on-aluminium-nitride bonded wafers[J]. CHINESE PHYSICS LETTERS,2002,19(11):1718-1720. |
APA | Men, CL,Xu, Z,Wu, YJ,An, ZH,Xie, XY,&Lin, CL.(2002).Geometrical deviation and residual strain in novel silicon-on-aluminium-nitride bonded wafers.CHINESE PHYSICS LETTERS,19(11),1718-1720. |
MLA | Men, CL,et al."Geometrical deviation and residual strain in novel silicon-on-aluminium-nitride bonded wafers".CHINESE PHYSICS LETTERS 19.11(2002):1718-1720. |
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