Quantum confinement effect in SiO2 films containing Ge microcrystallites

	Quantum confinement effect in SiO2 films containing Ge microcrystallites
	Tang, NY ; Wu, XM ; Zhuge, LJ ; Ye, CN ; Yao, WG ; Chen, J ; Dong, YM ; Yu, YH
刊名	JOURNAL OF MATERIALS SCIENCE
	2002
卷号	37 期号:11 页码:2259-2261
关键词	OPTICAL NONLINEARITY EXCITONS
ISSN号	0022-2461
通讯作者	Tang, NY, Suzhou Univ, Dept Phys, Suzhou 215006, Peoples R China
学科主题	Materials Science, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95617]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Tang, NY,Wu, XM,Zhuge, LJ,et al. Quantum confinement effect in SiO2 films containing Ge microcrystallites[J]. JOURNAL OF MATERIALS SCIENCE,2002,37(11):2259-2261.
APA	Tang, NY.,Wu, XM.,Zhuge, LJ.,Ye, CN.,Yao, WG.,...&Yu, YH.(2002).Quantum confinement effect in SiO2 films containing Ge microcrystallites.JOURNAL OF MATERIALS SCIENCE,37(11),2259-2261.
MLA	Tang, NY,et al."Quantum confinement effect in SiO2 films containing Ge microcrystallites".JOURNAL OF MATERIALS SCIENCE 37.11(2002):2259-2261.