Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials

	Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials
	Chen, M ; Wang, X ; Chen, J ; Liu, XH ; Dong, YM ; Yu, YH ; Wang, X
刊名	APPLIED PHYSICS LETTERS
	2002
卷号	80 期号:5 页码:880-882
关键词	SIMOX WAFERS TEMPERATURE
ISSN号	0003-6951
通讯作者	Chen, M, Chinese Acad Sci, Shanghai Inst Met, Ion Beam Lab, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95599]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Chen, M,Wang, X,Chen, J,et al. Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials[J]. APPLIED PHYSICS LETTERS,2002,80(5):880-882.
APA	Chen, M.,Wang, X.,Chen, J.,Liu, XH.,Dong, YM.,...&Wang, X.(2002).Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials.APPLIED PHYSICS LETTERS,80(5),880-882.
MLA	Chen, M,et al."Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials".APPLIED PHYSICS LETTERS 80.5(2002):880-882.