Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma

	Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma
	Chen, J ; Chen, M ; Dong, YM ; Wang, X ; Zheng, ZH ; Wang, X
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	2002
卷号	20 期号:4 页码:1570-1573
关键词	ION-IMPLANTATION HIGH-TEMPERATURE DIFFUSION HYDROGEN MECHANISM OXIDATION SIMOX SIO2
ISSN号	1071-1023
通讯作者	Chen, J, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95591]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Chen, J,Chen, M,Dong, YM,et al. Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2002,20(4):1570-1573.
APA	Chen, J,Chen, M,Dong, YM,Wang, X,Zheng, ZH,&Wang, X.(2002).Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,20(4),1570-1573.
MLA	Chen, J,et al."Increased thickness of buried oxide layer of silicon on insulator in separation by implantation of oxygen with water plasma".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 20.4(2002):1570-1573.