Stress current calculation of stacked dielectrics in time dependent dielectric breakdown | |
Yang, WW ; Cheng, XH ; Xing, YM ; Li, WJ ; Yu, YH | |
刊名 | JOURNAL OF APPLIED PHYSICS |
2003 | |
卷号 | 94期号:6页码:4032-4035 |
关键词 | TUNNELING CURRENTS OXIDE THICKNESS LEAKAGE CURRENT MOS CAPACITORS MODEL INTERFACES SIO2 |
ISSN号 | 0021-8979 |
通讯作者 | Yang, WW, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, Shanghai 200050, Peoples R China |
学科主题 | Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2012-03-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.sim.ac.cn/handle/331004/95558] |
专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
推荐引用方式 GB/T 7714 | Yang, WW,Cheng, XH,Xing, YM,et al. Stress current calculation of stacked dielectrics in time dependent dielectric breakdown[J]. JOURNAL OF APPLIED PHYSICS,2003,94(6):4032-4035. |
APA | Yang, WW,Cheng, XH,Xing, YM,Li, WJ,&Yu, YH.(2003).Stress current calculation of stacked dielectrics in time dependent dielectric breakdown.JOURNAL OF APPLIED PHYSICS,94(6),4032-4035. |
MLA | Yang, WW,et al."Stress current calculation of stacked dielectrics in time dependent dielectric breakdown".JOURNAL OF APPLIED PHYSICS 94.6(2003):4032-4035. |
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