Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure

	Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure
	An, ZH ; Wu, YJ ; Zhang, M ; Di, ZF ; Lin, CL ; Fu, RKY ; Chen, P ; Chu, PK ; Cheung, WY ; Wong, SP
刊名	APPLIED PHYSICS LETTERS
	2003
卷号	82 期号:15 页码:2452-2454
关键词	HOLE MOBILITY ENHANCEMENT STRAINED-SI ELECTRON MOSFETS LAYER
ISSN号	0003-6951
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95506]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	An, ZH,Wu, YJ,Zhang, M,et al. Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure[J]. APPLIED PHYSICS LETTERS,2003,82(15):2452-2454.
APA	An, ZH.,Wu, YJ.,Zhang, M.,Di, ZF.,Lin, CL.,...&Wong, SP.(2003).Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure.APPLIED PHYSICS LETTERS,82(15),2452-2454.
MLA	An, ZH,et al."Relaxed silicon-germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure".APPLIED PHYSICS LETTERS 82.15(2003):2452-2454.