Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation

	Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation
	Dong, YM ; Chen, M ; Chen, J ; Wang, X ; Wang, X
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2004
卷号	37 期号:13 页码:1732-1735
关键词	BURIED OXIDE LAYERS ION-IMPLANTATION SILICON OXIDATION
ISSN号	0022-3727
通讯作者	Dong, YM, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95384]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Dong, YM,Chen, M,Chen, J,et al. Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2004,37(13):1732-1735.
APA	Dong, YM,Chen, M,Chen, J,Wang, X,&Wang, X.(2004).Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation.JOURNAL OF PHYSICS D-APPLIED PHYSICS,37(13),1732-1735.
MLA	Dong, YM,et al."Comparative study of SOI/Si hybrid substrates fabricated using high-dose and low-dose oxygen implantation".JOURNAL OF PHYSICS D-APPLIED PHYSICS 37.13(2004):1732-1735.