A study of silicon oxynitride film prepared by ion beam assisted deposition

	A study of silicon oxynitride film prepared by ion beam assisted deposition
	Wang,YJ ; Cheng,XL ; Lin,ZL ; Zhang,CS ; Xiao,HB ; Zhang,F ; Zou,SC
刊名	MATERIALS LETTERS
	2004
卷号	58 期号:17-18 页码:2261-2265
关键词	RAY PHOTOELECTRON-SPECTROSCOPY WAVE-GUIDE REFRACTIVE-INDEX ON-INSULATOR THIN-FILMS AUGER-SPECTROSCOPY INTEGRATED-OPTICS NITRIDE FILMS ELLIPSOMETRY LAYERS
ISSN号	0167-577X
通讯作者	Wang, YJ, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ion Beam Lab, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Materials Science ; Multidisciplinary; Physics ; Applied
收录类别	SCI
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95367]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Wang,YJ,Cheng,XL,Lin,ZL,et al. A study of silicon oxynitride film prepared by ion beam assisted deposition[J]. MATERIALS LETTERS,2004,58(17-18):2261-2265.
APA	Wang,YJ.,Cheng,XL.,Lin,ZL.,Zhang,CS.,Xiao,HB.,...&Zou,SC.(2004).A study of silicon oxynitride film prepared by ion beam assisted deposition.MATERIALS LETTERS,58(17-18),2261-2265.
MLA	Wang,YJ,et al."A study of silicon oxynitride film prepared by ion beam assisted deposition".MATERIALS LETTERS 58.17-18(2004):2261-2265.