Characteristics of Sn-doped Ge2Sb2Te5 films used for phase-change memory

	Characteristics of Sn-doped Ge2Sb2Te5 films used for phase-change memory
	Xu, C ; Liu, B ; Song, ZT ; Feng, SL ; Chen, B
刊名	CHINESE PHYSICS LETTERS
	2005
卷号	22 期号:11 页码:2929-2932
关键词	RANDOM-ACCESS MEMORY ION-BEAM METHOD ELECTRICAL-PROPERTIES OPTICAL-PROPERTIES CELL-ELEMENT RESISTANCE IMPLANTATION TRANSITION ALLOYS MEDIA
ISSN号	0256-307X
通讯作者	Xu, C, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol, Shanghai 200050, Peoples R China
学科主题	Physics, Multidisciplinary
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95318]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Xu, C,Liu, B,Song, ZT,et al. Characteristics of Sn-doped Ge2Sb2Te5 films used for phase-change memory[J]. CHINESE PHYSICS LETTERS,2005,22(11):2929-2932.
APA	Xu, C,Liu, B,Song, ZT,Feng, SL,&Chen, B.(2005).Characteristics of Sn-doped Ge2Sb2Te5 films used for phase-change memory.CHINESE PHYSICS LETTERS,22(11),2929-2932.
MLA	Xu, C,et al."Characteristics of Sn-doped Ge2Sb2Te5 films used for phase-change memory".CHINESE PHYSICS LETTERS 22.11(2005):2929-2932.