BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes

	BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes
	Hong, T ; Zhang, YG(张永刚） ; Liu, TD ; Zheng, YL
刊名	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
	2005
卷号	152 期号:5 页码:G372-G374
关键词	III-V-SEMICONDUCTORS ROOM-TEMPERATURE CHEMISTRIES ALGAAS INAS GAAS
ISSN号	0013-4651
通讯作者	Hong, T, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat & Informat, Shanghai 200050, Peoples R China
学科主题	Electrochemistry; Materials Science, Coatings & Films
收录类别	SCI
语种	英语
公开日期	2012-03-24
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/95311]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式 GB/T 7714	Hong, T,Zhang, YG,Liu, TD,et al. BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2005,152(5):G372-G374.
APA	Hong, T,Zhang, YG,Liu, TD,&Zheng, YL.(2005).BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,152(5),G372-G374.
MLA	Hong, T,et al."BCl3/Ar ICP etching of GaSb and related materials for quaternary antimonide laser diodes".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152.5(2005):G372-G374.